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MMDF1N05E, MVDF1N05E
ELECTRICAL CHARACTERISTICS (T A = 25 ° C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain ? to ? Source Breakdown Voltage
(V GS = 0, I D = 250 m A)
Zero Gate Voltage Drain Current
(V DS = 50 V, V GS = 0)
Gate ? Body Leakage Current
(V GS = 20 Vdc, V DS = 0)
V (BR)DSS
I DSS
I GSS
50
?
?
?
?
?
?
2
100
Vdc
m Adc
nAdc
ON CHARACTERISTICS (Note 2)
Gate Threshold Voltage (V DS = V GS , I D = 250 m Adc)
Drain ? to ? Source On ? Resistance
(V GS = 10 Vdc, I D = 1.5 Adc)
(V GS = 4.5 Vdc, I D = 0.6 Adc)
Forward Transconductance (V DS = 15 V, I D = 1.5 A)
V GS(th)
R DS(on)
R DS(on)
g FS
1.0
?
?
?
?
?
?
1.5
3.0
0.30
0.50
?
Vdc
W
mhos
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
(V DS = 25 V, V GS = 0,
f = 1.0 MHz)
C iss
C oss
C rss
?
?
?
330
160
50
?
?
?
pF
SWITCHING CHARACTERISTICS (Note 3)
Turn ? On Delay Time
t d(on)
?
?
20
ns
Rise Time
Turn ? Off Delay Time
Fall Time
(V DD = 10 V, I D = 1.5 A, R L = 10 W ,
V G = 10 V, R G = 50 W )
t r
t d(off)
t f
?
?
?
?
?
?
30
40
25
Total Gate Charge
Gate ? Source Charge
Gate ? Drain Charge
(V DS = 10 V, I D = 1.5 A,
V GS = 10 V)
Q g
Q gs
Q gd
?
?
?
12.5
1.9
3.0
?
?
?
nC
SOURCE ? DRAIN DIODE CHARACTERISTICS (T C = 25 ° C)
Forward Voltage (Note 2)
Reverse Recovery Time
(I S = 1.5 A, V GS = 0 V)
(dI S /dt = 100 A/ m s)
V SD
t rr
?
?
?
45
1.6
?
V
ns
2. Pulse Test: Pulse Width ≤ 300 m s, Duty Cycle ≤ 2.0%.
3. Switching characteristics are independent of operating junction temperature.
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